Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model
نویسندگان
چکیده
0038-1101/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.sse.2011.10.024 ⇑ Corresponding author at: IBM Systems and Techn Monnet, Crolles, France. E-mail address: [email protected] (D. Gare A multiphonon-assisted model included in a Poisson–Schroedinger solver has been applied to the calculation of the capture/emission trapping rates of CMOS oxide interface defects. The dependencies of trap capture cross-sections with trap energy, depth, applied bias and temperature have been extracted, with the purpose of evaluating the accuracy of constant cross-section models adopted in compact and empirical approaches. The model has been applied to the extraction of interface trap concentrations and to the accurate AC analysis of the trap frequency response. 2011 Elsevier Ltd. All rights reserved.
منابع مشابه
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
Article history: Received 4 September 2011 Accepted 5 September 2011 Available online 2 October 2011 0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.09.002 E-mail address: [email protected] Charge trapping at oxide defects fundamentally affects the reliability of MOS transistors. In particular, charge trapping has long been made responsible for random telegr...
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